1Lutfiddin Omanovich Olimov,2 Iqboljon Ibroximovich Anarboyev
1Professor , Andijan Machine Building institute №56 Bobur Shox Ave, Andijan, Uzbekistan, 170100
ORCID: 0000-0002-0135-5861
2PhD student, Andijan Machine-Building Institute №56 Bobur Shox Ave, Andijan, Uzbekistan, 170100
DOI : https://doi.org/10.47191/ijmra/v4-i11-30Google Scholar Download Pdf
ABSTRACT:
The article first describes the results obtained in the study of the electrophysical and charge transfer processes of two structural polycrystalline silicon obtained by bonding silicon particles with sunlight. The results of the study show that the charge transfer processes in such structures are found to be different from each other. In particular, at T~300-800 K, a decrease in the surface area of both structures µ was observed, and the temperature dependence of p and n differed from each other. For example, (a) in the surface area T~300-350 K and T~600-710 K p increases and n decreases, at T~350-550 K p decreases and n increases. Conversely, the surface area of the sample (b) is characterized by an increase in p and a decrease in n at T≤575 K, a decrease in p in the later stages of temperature increase, and an increase in n.
Keywordspolycrystalline silicon, intergranular boundary, temperature, charge transfer processes, recombination centers.
REFERENCES
1) Harbek G. 1989 (eds) Polycrystalline semiconductors. Physical properties and applications: (Moscow, Russia).
2) L. Kazmerskii. 1983 (eds) Thin Polycrystalline and Amorphous Films. Physics and Applications. (Moscow, Russia).
3) Olimov L.O., Abdurakhmanov B.M. The Features of Impurity Thermal-Photovoltaic and thermal-Voltaic Effect of
Polycrystalline Structures. Advances in Energy and Power USA. 1(2): 51-55, 2013.
4) Olimov L.O. 2016 (eds) “The grain boundaries of polycrystalline silicon: microwaves, charge states and p-n-junction”.
Autoreferaty of doctoral dissertation. (Uzbekistan)
5) Olimov L.O, Abdurakhmanov B.M, Teshaboev A. 2014 Influence of alkali metal atoms on transport of charge carriers in
the between grain boundaries of polycrystalline silicon. J. Material Science, 1 14.
6) Olimov, L.O. 2012 Effect of alkali metals on the electronic properties of grain boundaries on a polycrystalline silicon
surface. J. Semiconductors, 46 898.
7) Olimov, L.O. 2010 Adsorption of alkali metals and their effect on electronic properties of grain boundaries in bulk of
polycrystalline silicon. J. Semiconductors, 44 602.
8) Abdurakhmanov, B.M., Olimov, L.O., Saidov, M.S. 2008 Electrophysical properties of solar polycrystalline silicon and its
n
+
-p structures at elevated temperatures. J. Applied Solar Energy 44 46.
9) Olimov, L.O. 2010 Model of the grain boundary in p-n structures based on polycrystalline semiconductors. J. Applied
Solar Energy, 46 118.
10) Saidov, M.S., Abdurakhmanov, B.M., Olimov, L.O. 2007 Impurity thermovoltaic effect in the grain boundaries of a
polycrystalline silicon solar cell. J. Applied Solar Energy, 4 203.
11) Olimov L.O., Anarboev I.I., Mamirov A., Omonboev F.L., Omonboeva M.L. 2021 (eds) Patent UZ № FAP 01593 "Method
of preparation of thermoelectric material".
VOLUME 04 ISSUE 11 NOVEMBER 2021
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